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Title: Evolution of surface stress during oxygen exposure of clean Si(111), Si(100), and amorphous Si surfaces

The evolutions of the surface stress of Si(111)-7 × 7, Si(100)-2 × 1, and a-Si surfaces upon oxygen exposure at pO{sub 2} = 1 × 10{sup −4} Pa and room temperature have been investigated in a comparative manner using a specimen-curvature based technique. To this end, a generally applicable, dedicated set of experiments has been devised and performed to deduce and correct for the surface stress change owing to oxygen reaction(s) at the (poorly-defined) back face of the specimen only. On this basis, it could be demonstrated that exposure of clean Si(111)-7 × 7, Si(100)-2 × 1 and a-Si surfaces to pure oxygen gas results in compressive surface stress changes for all three surfaces due to the incorporation of oxygen into Si backbonds. The measured surface stress change decreases with decreasing atomic packing density at the clean Si surfaces, which complies well with the less-densily packed Si surface regions containing more free volume for the accommodation of adsorbed O atoms.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research), Heisenbergstraße 3, D-70569 Stuttgart (Germany)
  2. (Germany)
Publication Date:
OSTI Identifier:
22271271
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ADSORPTION; ATOMS; CRYSTAL STRUCTURE; DENSITY; OXYGEN; SILICON; STRESSES; SURFACES; TEMPERATURE RANGE 0273-0400 K