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Title: Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures

Self-atom mixing induced by 310 keV gallium (Ga) ion implantation in crystalline and preamorphized germanium (Ge) at temperatures between 164 K and 623 K and a dose of 1 × 10{sup 15} cm{sup −2} is investigated using isotopic multilayer structures of alternating {sup 70}Ge and {sup nat}Ge layers grown by molecular beam epitaxy. The distribution of the implanted Ga atoms and the ion-beam induced depth-dependent self-atom mixing was determined by means of secondary ion mass spectrometry. Three different temperature regimes of self-atom mixing, i.e., low-, intermediate-, and high-temperature regimes are observed. At temperatures up to 423 K, the mixing is independent of the initial structure, whereas at 523 K, the intermixing of the preamorphized Ge structure is about twice as high as that of crystalline Ge. At 623 K, the intermixing of the initially amorphous Ge structure is strongly reduced and approaches the mixing of the crystalline material. The temperature dependence of ion-beam mixing is described by competitive amorphization and recrystallization processes.
Authors:
;  [1] ; ; ;  [2] ;  [3]
  1. Institute of Materials Physics, Westfälische Wilhelms-Universität Münster, 48149 Münster (Germany)
  2. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, D-01328 Dresden (Germany)
  3. Institut für Experimentelle und Angewandte Physik, 93040 Regensburg (Germany)
Publication Date:
OSTI Identifier:
22271261
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ATOMS; CRYSTAL STRUCTURE; GALLIUM; GALLIUM IONS; GERMANIUM; GERMANIUM 70; ION IMPLANTATION; KEV RANGE; LAYERS; MASS SPECTROSCOPY; MIXING; MOLECULAR BEAM EPITAXY; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RECRYSTALLIZATION; TEMPERATURE DEPENDENCE