Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures

Journal Article · Tue Jan 14 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4861174· OSTI ID:22271261

Radek, M.; Posselt, M.; Liedke, B.; Schmidt, B. ^[1]; Bougeard, D. ^[2]

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1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, D-01328 Dresden (Germany)
2. Institut für Experimentelle und Angewandte Physik, 93040 Regensburg (Germany)

Self-atom mixing induced by 310 keV gallium (Ga) ion implantation in crystalline and preamorphized germanium (Ge) at temperatures between 164 K and 623 K and a dose of 1 × 10{sup 15} cm{sup −2} is investigated using isotopic multilayer structures of alternating {sup 70}Ge and {sup nat}Ge layers grown by molecular beam epitaxy. The distribution of the implanted Ga atoms and the ion-beam induced depth-dependent self-atom mixing was determined by means of secondary ion mass spectrometry. Three different temperature regimes of self-atom mixing, i.e., low-, intermediate-, and high-temperature regimes are observed. At temperatures up to 423 K, the mixing is independent of the initial structure, whereas at 523 K, the intermixing of the preamorphized Ge structure is about twice as high as that of crystalline Ge. At 623 K, the intermixing of the initially amorphous Ge structure is strongly reduced and approaches the mixing of the crystalline material. The temperature dependence of ion-beam mixing is described by competitive amorphization and recrystallization processes.

• OSTI ID: 22271261
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ATOMS
CRYSTAL STRUCTURE
GALLIUM
GALLIUM IONS
GERMANIUM
GERMANIUM 70
ION IMPLANTATION
KEV RANGE
LAYERS
MASS SPECTROSCOPY
MIXING
MOLECULAR BEAM EPITAXY
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RECRYSTALLIZATION
TEMPERATURE DEPENDENCE