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Title: Microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond films by bias-enhanced nucleation and bias-enhanced growth

Effects of biasing voltage-current relationship on microwave plasma enhanced chemical vapor deposition of ultrananocrystalline diamond (UNCD) films on (100) silicon in hydrogen diluted methane by bias-enhanced nucleation and bias-enhanced growth processes are reported. Three biasing methods are applied to study their effects on nucleation, growth, and microstructures of deposited UNCD films. Method A employs 320 mA constant biasing current and a negative biasing voltage decreasing from −490 V to −375 V for silicon substrates pre-heated to 800 °C. Method B employs 400 mA constant biasing current and a decreasing negative biasing voltage from −375 V to −390 V for silicon pre-heated to 900 °C. Method C employs −350 V constant biasing voltage and an increasing biasing current up to 400 mA for silicon pre-heated to 800 °C. UNCD nanopillars, merged clusters, and dense films with smooth surface morphology are deposited by the biasing methods A, B, and C, respectively. Effects of ion energy and flux controlled by the biasing voltage and current, respectively, on nucleation, growth, microstructures, surface morphologies, and UNCD contents are confirmed by scanning electron microscopy, high-resolution transmission-electron-microscopy, and UV Raman scattering.
Authors:
 [1] ;  [1] ;  [2] ;  [3]
  1. Institute of Microelectronics, National Cheng Kung University No.1, University Road, Tainan 701, Taiwan (China)
  2. (China)
  3. Department of Materials Science and Engineering and Bioengineering, University of Texas in Dallas, 800 W. Campbell Rd, Richardson, Texas 75080 (United States)
Publication Date:
OSTI Identifier:
22271247
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTALS; DIAMONDS; MICROSTRUCTURE; MICROWAVE RADIATION; MORPHOLOGY; NANOSTRUCTURES; NUCLEATION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY