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Title: Investigation on the electrical transport properties of highly (00l)-textured Sb{sub 2}Te{sub 3} films deposited by molecular beam epitaxy

Highly (00l)-textured antimony telluride films were fabricated using molecular beam epitaxy (MBE) on Si (111) substrate at 280 °C. X-ray diffraction analysis implying the samples have good crystalline quality, simultaneously, the grain sizes coarsening with increasing thickness. The results of Hall coefficient measurement demonstrated that the carrier concentration and mobility are strongly affected by grain boundaries and microcrystalline internal defects. It was found that the grain boundaries play a primary factor influencing the carrier concentration in thinner film. At room temperature, the results in a maximum mobility value of 305 cm{sup 2}/Vs for 121-nm-thick film, and the electrical conductivity increased from 425.7 S/cm to 1036 S/cm as the thickness varied from 28 nm to 121 nm. In the range of room temperature to 150 °C, the resistivity almost linearly increased with increasing temperature. This may be explained by low concentration of impurities or defects and shallow impurity band. For difference thickness films, temperature coefficients of resistivity are substantially equal, and the values are about 3 ∼ 4 μΩ⋅cm/K.
Authors:
; ; ; ;  [1] ;  [2] ;  [3] ;  [2] ;  [1] ;  [2] ;  [2] ;  [2]
  1. Department of Physics, Shanghai University, Shanghai 200444 (China)
  2. (China)
  3. Institute of NanoMicroEnergy, Shanghai University, Shanghai 200444 (China)
Publication Date:
OSTI Identifier:
22271246
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY TELLURIDES; CARRIER MOBILITY; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; GRAIN BOUNDARIES; GRAIN SIZE; MOLECULAR BEAM EPITAXY; SILICON; SUBSTRATES; TEMPERATURE COEFFICIENT; TEMPERATURE RANGE 0273-0400 K; TEXTURE; THIN FILMS; X-RAY DIFFRACTION