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Title: Symmetry dependent optoelectronic properties of grain boundaries in polycrystalline Cu(In,Ga)Se{sub 2} thin films

In a correlative study applying electron backscatter diffraction as well as spatially and spectrally resolved cathodoluminescence spectroscopy at low temperatures of about 5 K, the symmetry-dependent optoelectronic properties of grain boundaries in Cu(In,Ga)Se{sub 2} thin films have been investigated. We find that grain boundaries with lower symmetries tend to show a distinct spectral red shift of about 10 meV and a weak influence on the emission intensity. These behaviors are not detected at high-symmetry Σ3 grain boundaries, or at least in a strongly reduced way. The investigations in the present work help to clarify the ambivalent properties reported for grain boundaries in Cu(In,Ga)Se{sub 2}.
Authors:
; ;  [1] ; ;  [2]
  1. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitätsplatz 2, 39106 Magdeburg (Germany)
  2. Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)
Publication Date:
OSTI Identifier:
22271239
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BACKSCATTERING; CATHODOLUMINESCENCE; COPPER SELENIDES; ELECTRON DIFFRACTION; EMISSION SPECTROSCOPY; GALLIUM SELENIDES; GRAIN BOUNDARIES; INDIUM SELENIDES; POLYCRYSTALS; RED SHIFT; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; THIN FILMS