Symmetry dependent optoelectronic properties of grain boundaries in polycrystalline Cu(In,Ga)Se{sub 2} thin films

Journal Article · Tue Jan 14 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4861149· OSTI ID:22271239

Müller, Mathias; Bertram, Frank; Christen, Jürgen ^[1]; Abou-Ras, Daniel; Rissom, Thorsten ^[2]

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1. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitätsplatz 2, 39106 Magdeburg (Germany)
2. Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

In a correlative study applying electron backscatter diffraction as well as spatially and spectrally resolved cathodoluminescence spectroscopy at low temperatures of about 5 K, the symmetry-dependent optoelectronic properties of grain boundaries in Cu(In,Ga)Se{sub 2} thin films have been investigated. We find that grain boundaries with lower symmetries tend to show a distinct spectral red shift of about 10 meV and a weak influence on the emission intensity. These behaviors are not detected at high-symmetry Σ3 grain boundaries, or at least in a strongly reduced way. The investigations in the present work help to clarify the ambivalent properties reported for grain boundaries in Cu(In,Ga)Se{sub 2}.

• OSTI ID: 22271239
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BACKSCATTERING
CATHODOLUMINESCENCE
COPPER SELENIDES
ELECTRON DIFFRACTION
EMISSION SPECTROSCOPY
GALLIUM SELENIDES
GRAIN BOUNDARIES
INDIUM SELENIDES
POLYCRYSTALS
RED SHIFT
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
THIN FILMS