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Title: Optical power of semiconductor lasers with a low-dimensional active region

A comprehensive analytical model for the operating characteristics of semiconductor lasers with a low-dimensional active region is developed. Particular emphasis is given to the effect of capture delay of both electrons and holes from a bulk optical confinement region into a quantum-confined active region and an extended set of rate equations is used. We derive a closed-form expression for the internal quantum efficiency as an explicit function of the injection current and parameters of a laser structure. Due to either electron or hole capture delay, the internal efficiency decreases with increasing injection current above the lasing threshold thus causing sublinearity of the light-current characteristic of a laser.
Authors:
 [1] ;  [2]
  1. Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061 (United States)
  2. Ioffe Physico-Technical Institute, St. Petersburg 194021 (Russian Federation)
Publication Date:
OSTI Identifier:
22271235
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL STRUCTURE; ELECTRIC CURRENTS; ELECTRON CAPTURE; ELECTRONS; HOLES; MATHEMATICAL MODELS; QUANTUM EFFICIENCY; SEMICONDUCTOR LASERS; VISIBLE RADIATION