Droplet destabilization during Bi catalyzed vapor-liquuid-solid growth of GaAs

Journal Article · Fri Mar 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4868677· OSTI ID:22271216

Nothern, D.; Millunchick, J. M. ^[1]

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1. Department of Materials Science and Engineering, University of Michigan 2300 Hayward Street, Ann Arbor, Michigan 48105 (United States)

GaAs nanodiscs are grown in a molecular beam epitaxy chamber via the vapor-liquid-solid mechanism with liquid Bi as the catalyst. Each nanostructure consists of a series of increasingly larger overlapping discs. The structure forms during deposition due to the fact that the catalyst grows until reaching a critical size whereupon it destabilizes, dropping off the disc onto the substrate, where it catalyzes the growth of a new disc of larger radius. It is shown that critical size is limited by the sidewall wetting with a contact angle significantly smaller than the Gibb's criterion.

• OSTI ID: 22271216
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
BISMUTH
CATALYSTS
CRITICAL SIZE
DEPOSITION
DROPLETS
GALLIUM ARSENIDES
LIQUIDS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
SOLIDS
SUBSTRATES
VAPORS