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Title: Droplet destabilization during Bi catalyzed vapor-liquuid-solid growth of GaAs

GaAs nanodiscs are grown in a molecular beam epitaxy chamber via the vapor-liquid-solid mechanism with liquid Bi as the catalyst. Each nanostructure consists of a series of increasingly larger overlapping discs. The structure forms during deposition due to the fact that the catalyst grows until reaching a critical size whereupon it destabilizes, dropping off the disc onto the substrate, where it catalyzes the growth of a new disc of larger radius. It is shown that critical size is limited by the sidewall wetting with a contact angle significantly smaller than the Gibb's criterion.
Authors:
; ;  [1]
  1. Department of Materials Science and Engineering, University of Michigan 2300 Hayward Street, Ann Arbor, Michigan 48105 (United States)
Publication Date:
OSTI Identifier:
22271216
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; BISMUTH; CATALYSTS; CRITICAL SIZE; DEPOSITION; DROPLETS; GALLIUM ARSENIDES; LIQUIDS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SOLIDS; SUBSTRATES; VAPORS