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Title: Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Various plasma treatment effects such as oxygen (O{sub 2}), nitrogen (N{sub 2}), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O{sub 2} and N{sub 2} plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented.
Authors:
; ; ;  [1] ;  [1] ;  [2] ;  [1] ;  [3] ;  [1] ;  [3]
  1. School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)
  2. (France)
  3. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22271207
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ARGON; CHARGE CARRIERS; CONCENTRATION RATIO; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; OXYGEN; PLASMA; SURFACES; THIN FILMS; TRANSISTORS; TRAPS; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES