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Title: Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

Energy storage is a key challenge in solar-driven renewable energy conversion. We promote a photochemical diode based on dilute nitride GaPN grown lattice-matched on Si(100), which could reach both high photovoltaic efficiencies and evolve hydrogen directly without external bias. Homoepitaxial GaP(100) surface preparation was shown to have a significant impact on the semiconductor-water interface formation. Here, we grow a thin, pseudomorphic GaP nucleation buffer on almost single-domain Si(100) prior to GaPN growth and compare the GaP{sub 0.98}N{sub 0.02}/Si(100) surface preparation to established P- and Ga-rich surfaces of GaP/Si(100). We apply reflection anisotropy spectroscopy to study the surface preparation of GaP{sub 0.98}N{sub 0.02} in situ in vapor phase epitaxy ambient and benchmark the signals to low energy electron diffraction, photoelectron spectroscopy, and x-ray diffraction. While the preparation of the Ga-rich surface is hardly influenced by the presence of the nitrogen precursor 1,1-dimethylhydrazine (UDMH), we find that stabilization with UDMH after growth hinders well-defined formation of the V-rich GaP{sub 0.98}N{sub 0.02}/Si(100) surface. Additional features in the reflection anisotropy spectra are suggested to be related to nitrogen incorporation in the GaP bulk.
Authors:
 [1] ;  [2] ;  [2] ; ;  [3] ;  [2] ;  [3] ;  [3] ;  [4] ;  [1] ;  [2]
  1. Technische Universität Ilmenau, Institut für Physik, Gustav-Kirchhoff-Str. 5, 98684 Ilmenau (Germany)
  2. (Germany)
  3. Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)
  4. (United States)
Publication Date:
OSTI Identifier:
22271195
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; COMPARATIVE EVALUATIONS; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; ENERGY STORAGE; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; HYDROGEN; INTERFACES; PHOTOELECTRON SPECTROSCOPY; PHOTOVOLTAIC EFFECT; SEMICONDUCTOR MATERIALS; SILICON; SURFACES; VAPOR PHASE EPITAXY; VISIBLE RADIATION; X-RAY DIFFRACTION