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Title: Tight-binding analysis of the electronic states in AlAs with N isoelectronic impurities

Incorporation of nitrogen (N) atoms into III–V semiconductors significantly changes their electronic structures. The aim of this study was to assess the electronic states in AlAs that contained N impurities. An sp{sup 3}s{sup *} tight-binding model along with valence-force-field strain calculations were used to obtain the energy levels in N-doped AlAs. The calculations showed that an isolated N atom formed a resonant state above the conduction band edge in AlAs. In contrast, NN{sub 1}[110] and NN{sub 4}[220] pairs formed bound states inside the band gap. The formation of two bound states was consistent with the photoluminescence spectrum of N δ-doped AlAs.
Authors:
 [1] ;  [2] ; ; ;  [1]
  1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22271175
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; ATOMS; BOUND STATE; DOPED MATERIALS; ELECTRONIC STRUCTURE; EMISSION SPECTRA; ENERGY LEVELS; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; STRAINS; VALENCE