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Title: Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

X-ray Pendellösung fringes from three silicon single crystals measured at 900 °C are analyzed with respect to density and size of oxygen precipitates within a diffusion-driven growth model and compared with TEM investigations. It appears that boron doped (p+) material shows a higher precipitate density and a higher strain than moderately (p-) boron crystals. In-situ diffraction reveals a diffusion-driven precipitate growth followed by a second growth regime in both materials. An interpretation of the second growth regime in terms of Ostwald ripening yields surface energy values (around 70 erg/cm{sup 2}) similar to published data. Further, an increased nucleation rate by a factor of ∼13 is found in the p+ sample as compared to a p- sample at a nucleation temperature of 450 °C.
Authors:
; ; ;  [1] ;  [2]
  1. Crystallography and Structural Physics, University of Erlangen-Nürnberg, Staudtstr. 3, 91058 Erlangen (Germany)
  2. Center for Nanoanalysis and Electron Microscopy, University of Erlangen-Nürnberg, Cauerstr. 6, 91058 Erlangen (Germany)
Publication Date:
OSTI Identifier:
22271168
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON; COMPARATIVE EVALUATIONS; DIFFUSION; DOPED MATERIALS; MONOCRYSTALS; NUCLEATION; OXYGEN; PRECIPITATION; SILICON; STRAINS; SURFACE ENERGY; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION