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Title: Investigating the impact of source/drain doping dependent effective masses on the transport characteristics of ballistic Si-nanowire field-effect-transistors

This article studies the impact of doping dependent carrier effective masses of the source/drain regions on transport properties of Si-nanowire field effect transistors within ballistic limit. The difference of carrier effective mass in channel and that in the source/drain regions leads to a misalignment of respective sub-bands and forms non-ideal contacts. Such non-idealities are incorporated by modifying the relevant self-energies which control the effective electronic transport from source to drain through the channel. Non-ideality also arises in the nature of local density of states in the channel due to sub-band misalignment, resulting to a reduction of drain current by almost 50%. The highest values of drain current, leakage current, and their ratio are obtained for the S/D doping concentrations of 3 × 10{sup 20} cm{sup −3}, 8 × 10{sup 20} cm{sup −3}, and 2 × 10{sup 20} cm{sup −3}, respectively, for the nanowire of length 10 nm and diameter of 3 nm. Interestingly, the maximum of sub-threshold swing, minimum of threshold voltage, and the maximum of leakage current are observed to be apparent at the same doping concentration.
Authors:
 [1] ;  [2]
  1. Centre for Research in Nanoscience and Nanotechnology (CRNN), University of Calcutta, Kolkata (India)
  2. Department of Electronic Science, University of Calcutta, Kolkata (India)
Publication Date:
OSTI Identifier:
22271162
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; CONCENTRATION RATIO; EFFECTIVE MASS; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; ENERGY-LEVEL DENSITY; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENT; QUANTUM WIRES; SELF-ENERGY; SILICON