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Title: Band engineering of GaN/AlN quantum wells by Si dopants

The electronic properties of GaN/AlN quantum wells are engineered by Si doped in different positions with the aid of the first-principle calculations. The local potential where the dopant located is dragged down as a result of negative center induced by the Si atom, leading to a different shift of the potential, and further affects the band bending and carrier distribution. The band profiles are depicted by analyzing the projected densities of states, it is found that the different positions of Si doping lead to a different band bending owing to the modified polarization fields. The spatial distributions of electrons and holes plotted by the partial charge densities reveal that electrons and holes experience redistribution by Si dopant in different positions. The above results demonstrate that the effect of polarization on the band bending has been significantly modulated by Si doped in different positions. Such modification of electronic structure is especially valuable for the fabrication of GaN/AlN QWs under desired control.
Authors:
; ; ; ; ; ;  [1]
  1. Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005 (China)
Publication Date:
OSTI Identifier:
22271158
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; CHARGE DENSITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; ELECTRONS; GALLIUM NITRIDES; HETEROJUNCTIONS; HOLES; INTERFACES; POLARIZATION; QUANTUM WELLS; SILICON; SPATIAL DISTRIBUTION