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Title: Determination of the Fermi level position in dilute magnetic Ga{sub 1-x}Mn{sub x}N films

We report on a combined theoretical and experimental determination of the Fermi level position in wurtzite Ga{sub 1−x}Mn{sub x}N films with x=4% and x=10% as grown by molecular beam epitaxy. By means of ellipsometric measurements, the real part of the frequency-dependent conductivity is determined. An electronic model in the framework of the effective bond-orbital model is parameterized in order to theoretically reproduce the measured transport properties. Predictions for the long-wavelength behaviour as a function of the Fermi level are made. The corresponding density of states obtained in this model is in qualitative agreement with first-principle calculations. The absence of a significant experimental peak in the AC conductivity for small frequencies indicates that the Fermi level lies in a gap between two Mn-related impurity bands in the host band gap.
Authors:
; ;  [1] ; ; ;  [2] ; ;  [3] ;  [2] ;  [4]
  1. Institute for Theoretical Physics, University of Bremen, D-28359 Bremen (Germany)
  2. Institute of Solid State Physics, University of Bremen, D-28359 Bremen (Germany)
  3. Institute of Physical Chemistry “Ilie Murgulescu,” Romanian Academy, 060021 Bucharest (Romania)
  4. (Germany)
Publication Date:
OSTI Identifier:
22271154
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; ELLIPSOMETRY; ENERGY GAP; ENERGY-LEVEL DENSITY; FERMI LEVEL; FREQUENCY DEPENDENCE; GALLIUM NITRIDES; MAGNETIC MATERIALS; MANGANESE NITRIDES; MOLECULAR BEAM EPITAXY; THIN FILMS