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Title: Photoluminescence enhancement of the single InAs quantum dots through plasmonic Au island films

The approach of optical positioning the single InAs quantum dots (QDs) was used for investigating QD photoluminescence (PL) enhancement based on plasmonic effect of nanometer-sized Au island films. It is found that the maximum increase of QD PL intensity is about thirty-eight fold after 5-nm thick Au island films are evaporated on the QD sample surface. The enhanced localized excitation field and increased QD radiative decay rate are responsible for this PL enhancement. This provides an alternative way of preparing bright single photon sources based on the plasmonic effect.
Authors:
; ; ; ; ; ; ;  [1]
  1. State Key Laboratory for Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22271148
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EXCITATION; GOLD; INDIUM ARSENIDES; PHOTOLUMINESCENCE; PHOTONS; PLASMONS; QUANTUM DOTS; SURFACES; THIN FILMS