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Title: Temporal evolution of nanoporous layer in off-normally ion irradiated GaSb

Room temperature irradiation of GaSb by 60 keV Ar{sup +}-ions at an oblique incidence of 60° leads to simultaneous formation of a nanoporous layer and undulations at the interface with the underlying substrate. Interestingly, with increasing ion fluence, a gradual embedding of the dense nanoporous layer takes place below ridge-like structures (up to the fluence of 1 × 10{sup 17} ions cm{sup −2}), which get extended to form a continuous layer (at fluences ≥4 × 10{sup 17} ions cm{sup −2}). Systematic compositional analyses reveal the co-existence of Ga{sub 2}O{sub 3} and Sb{sub 2}O{sub 3} in the surface layer. The results are discussed in terms of a competition between ion-induced defect accumulation and re-deposition of sputtered atoms on the surface.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4]
  1. SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha (India)
  2. Department of Physics, School of Natural Sciences, Shiv Nadar University, Gautam Budh Nagar, Uttar Pradesh 203 207 (India)
  3. School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751 005, Odisha (India)
  4. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)
Publication Date:
OSTI Identifier:
22271132
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANTIMONY OXIDES; ARGON IONS; DEPOSITION; GALLIUM ANTIMONIDES; GALLIUM OXIDES; INTERFACES; IRRADIATION; LAYERS; NANOSTRUCTURES; PHYSICAL RADIATION EFFECTS; SPUTTERING; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K