skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Admittance of multiterminal quantum Hall conductors at kilohertz frequencies

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4869796· OSTI ID:22271123
 [1]; ;  [2]
  1. Departamento de Física, Universidad Militar Nueva Granada, Carrera 11 101-80 Bogotá D.C. (Colombia)
  2. Université de Lyon, Fédération de Physique Andrée Marie Ampère, CNRS, Laboratoire de Physique de l'Ecole Normale Supérieure de Lyon, 46 allée d'Italie, 69364 Lyon Cedex 07 (France)

We present an experimental study of the low frequency admittance of quantum Hall conductors in the [100 Hz, 1 MHz] frequency range. We show that the frequency dependence of the admittance of the sample strongly depends on the topology of the contacts connections. Our experimental results are well explained within the Christen and Büttiker approach for finite frequency transport in quantum Hall edge channels taking into account the influence of the coaxial cables capacitance. In the Hall bar geometry, we demonstrate that there exists a configuration in which the cable capacitance does not influence the admittance measurement of the sample. In this case, we measure the electrochemical capacitance of the sample and observe its dependence on the filling factor.

OSTI ID:
22271123
Journal Information:
Journal of Applied Physics, Vol. 115, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English

Similar Records

Admittance–voltage profiling of Al{sub x}Ga{sub 1−x}N/GaN heterostructures: Frequency dependence of capacitance and conductance
Journal Article · Sat Nov 28 00:00:00 EST 2015 · Journal of Applied Physics · OSTI ID:22271123

AC-magnetotransport of a 2DEG in the quantum Hall regime
Journal Article · Thu May 15 00:00:00 EDT 2014 · AIP Conference Proceedings · OSTI ID:22271123

Frequency dependence of the admittance of a quantum point contact
Journal Article · Thu Oct 01 00:00:00 EDT 1998 · Physical Review, B: Condensed Matter · OSTI ID:22271123