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Title: Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes

A particular edge-dependent inversion current behavior of metal-oxide-semiconductor (MOS) tunneling diodes was investigated utilizing square and comb-shaped electrodes. The inversion tunneling current exhibits the strong dependence on the tooth size of comb-shaped electrodes and oxide thickness. Detailed illustrations of current conduction mechanism are developed by simulation and experimental measurement results. It is found that the electron diffusion current and Schottky barrier height lowering for hole tunneling current both contribute on inversion current conduction. In MOS tunneling photodiode applications, the photoresponse can be improved by decreasing SiO{sub 2} thickness and using comb-shaped electrodes with smaller tooth spacing. Meantime, the high and steady photosensitivity can also be approached by introducing HfO{sub 2} into dielectric stacks.
Authors:
; ; ;  [1]
  1. Graduate Institute of Electronics Engineering, Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
Publication Date:
OSTI Identifier:
22271114
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPUTERIZED SIMULATION; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRONS; HAFNIUM OXIDES; HOLES; METALS; PHOTOSENSITIVITY; SEMICONDUCTOR MATERIALS; SILICON OXIDES; THICKNESS; TUNNEL DIODES; TUNNEL EFFECT