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Title: Electric field geometries dominate quantum transport coupling in silicon nanoring

Investigations on the relation between the geometries of silicon nanodevices and the quantum phenomenon they exhibit, such as the Aharonov–Bohm (AB) effect and the Coulomb blockade, were conducted. An arsenic doped silicon nanoring coupled with a nanowire by electron beam lithography was fabricated. At 1.47 K, Coulomb blockade oscillations were observed under modulation from the top gate voltage, and a periodic AB oscillation of ΔB = 0.178 T was estimated for a ring radius of 86 nm under a high sweeping magnetic field. Modulating the flat top gate and the pointed side gate was performed to cluster and separate the many electron quantum dots, which demonstrated that quantum confinement and interference effects coexisted in the doped silicon nanoring.
Authors:
;  [1]
  1. Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China)
Publication Date:
OSTI Identifier:
22271111
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AHARONOV-BOHM EFFECT; ARSENIC; COUPLING; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON BEAMS; ELECTRONS; INTERFERENCE; MAGNETIC FIELDS; MODULATION; OSCILLATIONS; PERIODICITY; QUANTUM DOTS; SILICON