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Title: Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring

The variation of the band gap energy of III-N-V semiconductors induced by hydrogen incorporation is the most striking effect that H produces in these materials. A special emphasis is given here to the combination of N-activity passivation by hydrogen with H diffusion kinetics in dilute nitrides. Secondary ion mass spectrometry shows an extremely steep (smaller than 5 nm/decade) forefront of the H diffusion profile in Ga(AsN) under appropriate hydrogenation conditions. This discovery prompts the opportunity for an in-plane nanostructuring of hydrogen incorporation and, hence, for a modulation of the material band gap energy at the nanoscale. The properties of quantum dots fabricated by a lithographically defined hydrogenation are presented, showing the zero-dimensional character of these novel nanostructures. Applicative prospects of this nanofabrication method are finally outlined.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [3]
  1. Dipartimento di Fisica, and CNISM Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma (Italy)
  2. (IFN-CNR), National Research Council (CNR), via Cineto Romano 42, 00156 Roma (Italy)
  3. Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz (Austria)
Publication Date:
OSTI Identifier:
22271093
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ARSENIC COMPOUNDS; DIFFUSION; GALLIUM NITRIDES; HYDROGEN; HYDROGENATION; MASKING; MASS SPECTROSCOPY; QUANTUM DOTS; SEMICONDUCTOR MATERIALS