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Title: Donor levels of the divacancy-oxygen defect in silicon

The elimination of divacancies (V{sub 2}) upon isochronal and isothermal annealing has been studied in oxygen-rich p-type silicon by means of deep level transient spectroscopy (DLTS) and high resolution Laplace DLTS. Divacancies were introduced into the crystals by irradiation with 4 or 6 MeV electrons. The temperature range of the divacancy disappearance was found to be 225-300 °C upon 30 min isochronal annealing in the samples studied. A clear anti-correlation between the disappearance of V{sub 2} and the appearance of two hole traps with activation energies for hole emission of 0.23 eV and 0.08 eV was observed. It is argued that these traps are related to the first and second donor levels of the divacancy-oxygen (V{sub 2}O) complex, respectively. Significant electric field enhancement of the hole emission from the second donor level of the V{sub 2}O center occurred in the diodes studied. It is shown that in the range of electric field from 4 × 10{sup 3} to 1.2 × 10{sup 4} V/cm the emission enhancement is associated with phonon-assisted tunnelling.
Authors:
; ;  [1] ; ;  [2]
  1. Photon Science Institute, the University of Manchester, Manchester M13 9PL (United Kingdom)
  2. Scientific-Practical Materials Research Center of NAS of Belarus, Minsk 220072 (Belarus)
Publication Date:
OSTI Identifier:
22271088
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ANNEALING; CORRELATIONS; CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELDS; ELECTRON BEAMS; HOLES; IRRADIATION; OXYGEN; PHONONS; PHYSICAL RADIATION EFFECTS; SILICON; TUNNEL EFFECT; VACANCIES