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Title: Structure and mechanical properties of 3dTM ion doped RF sputtered ZnO thin films on Si (100)

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4872825· OSTI ID:22271078
;  [1]
  1. School of Physics, University of Hyderabad, Central University P.O, Hyderabad-500046 (India)

Mn, Fe and Mn-Fe doped ZnO thin films were deposited on Si (100) substrates by rf- magnetron sputtering using ceramic target in pure oxygen gas environment. The X-ray diffraction shows the polycrystalline wurtzite structure films. The average grain size varies from 32-50 nm, with lower grain size for Fe doped ZnO films. The room temperature loading and unloading curve are continuous without any pop-in. The Young's modulus and hardness are in the range 156-178 GPa and 14-15.5 GPa respectively.

OSTI ID:
22271078
Journal Information:
AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English