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Title: Structural transformations in reactively sputtered alumina films

Thin films of amorphous alumina of thickness ∼350 nm were prepared on silicon wafer by DC cathode reactive sputtering. The effects of thermal annealing on the structural properties were investigated at annealing temperatures of 600°C, 800°C, 1100°C and 1220°C. X-ray diffraction showed that crystallization starts at 800°C and produces δ and θ alumina phases, the latter phase grows with heat treatment and the film was predominantly δ-phase with small amount of a-phase after annealing at 1220°C. AFM studies found that the surface of thin films smoothened upon crystallization.
Authors:
;  [1]
  1. Department of Physics, Guru Nanak Dev University, Amritsar - 143005 (India)
Publication Date:
OSTI Identifier:
22271070
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ANNEALING; ATOMIC FORCE MICROSCOPY; CATHODES; CRYSTALLIZATION; SILICON; SPUTTERING; SURFACES; TEMPERATURE DEPENDENCE; THICKNESS; THIN FILMS; X-RAY DIFFRACTION