Study of photoconductivity in Ni doped CdS thin films prepared by spray pyrolysis technique

Journal Article · Thu Apr 24 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4872807· OSTI ID:22271066

Gangrade, Mohan; Nath, R.; Ganesan, V. ^[1]; Ajay, Akhil ^[2]; Wala, Arwa Dewas ^[3]; N, Kiran ^[4]; Panda, Richa ^[5]

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1. UGC-DAE Consortium for Scientific Research, Khandawa Road, Indore 452001 (India)
2. Physics Department, University of Delhi, Delhi-110007 (India)
3. Holkar Science College, Indore - 452001 (India)
4. Physics Department, University of Mysore, Mysore-570005 (India)
5. AITR, Bhopal-462044 (India)

Ni-doped cadmium sulphide [Cd{sub 1−x}Ni{sub x}S, (x=0, 0.03, 0.05 and 0.20)] thin films were investigated for photoconductive properties. The films were prepared by spray Pyrolysis technique (SPT). AFM and two probe resistivity measurements were carried out to analyze the morphological and electrical properties of the films. AFM shows the note worthy changes in the morphology where the nanorod structures in CdS is changed into nano particles with the Ni doping. The presence of persistence photo current is demonstrated and extensive photoconductivity analysis has been studied on these films.

• OSTI ID: 22271066
• Journal Information: AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
CADMIUM SULFIDES
CONCENTRATION RATIO
DOPED MATERIALS
NANOSTRUCTURES
NICKEL SULFIDES
PHOTOCONDUCTIVITY
PHOTOCURRENTS
PYROLYSIS
THIN FILMS