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Title: Hydrogen removal from e-beam deposited alumina thin films by oxygen ion beam

Hydrogen interstitials and oxygen vacancies defects create energy levels in the band gap of alumina. This limits the application of alumina as a high-k dielectric. A low thermal budget method for removal of hydrogen from alumina is discussed. It is shown that bombardment of alumina films with low energy oxygen ion beam during electron beam evaporation deposition decreases the hydrogen concentration in the film significantly.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2]
  1. Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)
  2. UGC-DAE Consortium for Scientific Research, Indore-452017 (India)
Publication Date:
OSTI Identifier:
22271060
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CONCENTRATION RATIO; DEPOSITION; DIELECTRIC MATERIALS; ELECTRON BEAMS; ENERGY LEVELS; EVAPORATION; HYDROGEN; INTERSTITIALS; ION BEAMS; OXYGEN IONS; PHYSICAL RADIATION EFFECTS; REMOVAL; THIN FILMS; VACANCIES