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Title: Electronic structure of Fe{sub 3}Si on Si(100) substrates

The improved performance of large-scale integrated circuits (LSIs) by the shrinking of devices is becoming difficult due to physical limitations. Here we report, the growth and formation of Fe{sub 3}Si on Si(100) and characterized by x-ray photoemission, UV photoemission and low energy electron diffraction to study the electronic structure. The results revealed that the DO{sub 3} phase formation is exist and photoemission results also support the electron diffraction outcome.
Authors:
 [1] ;  [2] ;  [2] ; ; ; ;  [3] ;  [4] ;  [1]
  1. Centre for Non-Conventional Energy Resources, 14-Vigyan Bhavan, University of Rajasthan, Jaipur-302004 (India)
  2. (Italy)
  3. Synchrotron S.C.p.A., SS-14 km, 163.5, in Area Science Park, 34149, Basovizza, Trieste (Italy)
  4. Department of Physics, Obafemi Awolowo University Ile-Ife (Nigeria)
Publication Date:
OSTI Identifier:
22271058
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; INTEGRATED CIRCUITS; IRON SILICIDES; PERFORMANCE; PHASE STABILITY; PHASE STUDIES; PHOTOEMISSION; SILICON; SUBSTRATES; X RADIATION