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Title: Indium doped zinc oxide nanowire thin films for antireflection and solar absorber coating applications

Indium doped ZnO nanowire thin films were prepared by thermal oxidation of Zn-In metal bilayer films at 500°C. The ZnO:In nanowires are 20-100 nm in diameter and several tens of microns long. X-ray diffraction patterns confirm the formation of oxide and indicate that the films are polycrystalline, both in the as deposited and annealed states. The transmission which is <2% for the as deposited Zn-In films increases to >90% for the ZnO:In nanowire films. Significantly, the reflectance for the as deposited films is < 10% in the region between 200 to 1500 nm and < 2% for the nanowire films. Thus, the as deposited films can be used solar absorber coatings while the nanowire films are useful for antireflection applications. The growth of nanowires by this technique is attractive since it does not involve very high temperatures and the use of catalysts.
Authors:
 [1] ;  [2]
  1. ACRHEM, University of Hyderabad, Hyderabad-500046 (India)
  2. ACRHEM and School of Physics, University of Hyderabad, Hyderabad-500046 (India)
Publication Date:
OSTI Identifier:
22269597
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; DOPED MATERIALS; INDIUM COMPOUNDS; OXIDATION; POLYCRYSTALS; QUANTUM WIRES; SOLAR ABSORBERS; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES