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Title: Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb

Ultra low resistance ohmic contacts are fabricated on n-GaSb grown by molecular beam epitaxy. Different doping concentrations and n-GaSb thicknesses are studied to understand the tunneling transport mechanism between the metal contacts and the semiconductor. Different contact metallization and anneal process windows are investigated to achieve optimal penetration depth of Au in GaSb for low resistances. The fabrication, electrical characterization, and microstructure analysis of the metal-semiconductor interfaces created during ohmic contact formation are discussed. The characterization techniques include cross-sectional transmission electron microscopy and energy dispersive spectroscopy. Specific transfer resistances down to 0.1 Ω mm and specific contact resistances of 1 × 10{sup −6} Ω cm{sup 2} are observed.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106 (United States)
  2. Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, 302 Whittemore, Blacksburg, Virginia, 24061 (United States)
Publication Date:
OSTI Identifier:
22269580
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 1; Journal Issue: 6; Other Information: (c) 2013 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ANTIMONIDES; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NICKEL; PENETRATION DEPTH; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL EFFECT