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Title: The physics and chemistry of the Schottky barrier height

The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.
Authors:
 [1]
  1. Department of Physics, Brooklyn College, CUNY, 2900 Bedford Avenue, Brooklyn, New York 11210, USA and Physics Ph.D. Program, The Graduate Center, CUNY, 365 Fifth Avenue, New York 10016 (United States)
Publication Date:
OSTI Identifier:
22269572
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Reviews; Journal Volume: 1; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EQUATIONS; INTERFACES; SEMICONDUCTOR MATERIALS