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Title: Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition

Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs) synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si{sub 1−x}Ge{sub x} for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.
Authors:
;  [1]
  1. Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)
Publication Date:
OSTI Identifier:
22269557
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 2; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON; DEPOSITION; DEPOSITS; DOPED MATERIALS; GERMANIUM; GERMANIUM ALLOYS; GERMANIUM SILICIDES; NANOSTRUCTURES; PHOSPHORUS; PHYSICAL PROPERTIES; PLASMA; PRECURSOR; SILICON; SYNTHESIS; TEMPERATURE RANGE 0400-1000 K; THERMOELECTRIC MATERIALS; THIN FILMS; X RADIATION