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Title: Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Instituto de Investigación en Comunicación Optica, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, San Luis Potosí, SLP 78000 (Mexico)
  2. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
  3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
22269547
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 3; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SPECTRA; SPECTROSCOPY; STRAINS; TIME RESOLUTION; ZINC SULFIDES