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Title: Intrinsic nature of visible-light absorption in amorphous semiconducting oxides

To enlighten microscopic origin of visible-light absorption in transparent amorphous semiconducting oxides, the intrinsic optical property of amorphous InGaZnO{sub 4} is investigated by considering dipole transitions within the quasiparticle band structure. In comparison with the crystalline InGaZnO{sub 4} with the optical gap of 3.6 eV, the amorphous InGaZnO{sub 4} has two distinct features developed in the band structure that contribute to significant visible-light absorption. First, the conduction bands are down-shifted by 0.55 eV mainly due to the undercoordinated In atoms, reducing the optical gap between extended states to 2.8 eV. Second, tail states formed by localized oxygen p orbitals are distributed over ∼0.5 eV near the valence edge, which give rise to substantial subgap absorption. The fundamental understanding on the optical property of amorphous semiconducting oxides based on underlying electronic structure will pave the way for resolving instability issues in recent display devices incorporating the semiconducting oxides.
Authors:
; ;  [1] ;  [2] ;  [3] ; ;  [4]
  1. Department of Materials Science and Engineering, Seoul National University, Seoul 151-755 (Korea, Republic of)
  2. Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747 (Korea, Republic of)
  3. (Korea, Republic of)
  4. CAE Team, Samsung Display Co., Ltd, 95 Samsung 2-ro, Giheung-gu, Youngin-City, Gyeonggi-Do 446-711 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22269546
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 3; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; DIPOLES; DISPLAY DEVICES; ELECTRONIC STRUCTURE; INSTABILITY; OPTICAL PROPERTIES; OXIDES; OXYGEN; SEMICONDUCTOR MATERIALS