Electrochemical deposition of iron sulfide thin films and heterojunction diodes with zinc oxide

Journal Article · Sat Mar 01 00:00:00 EST 2014 · APL Materials

DOI:https://doi.org/10.1063/1.4869035· OSTI ID:22269544

Kawai, Shoichi; Sobue, Susumu; Okuno, Eiichi ^[1]; Yamazaki, Ryuta; Ichimura, Masaya ^[2]

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1. DENSO CORP. Research Laboratories, Komenoki, Nissin, Aichi 470-0111 (Japan)
2. Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

Iron sulfide thin films were fabricated by the electrochemical deposition method from an aqueous solution containing FeSO{sub 4} and Na{sub 2}S{sub 2}O{sub 3}. The composition ratio obtained was Fe:S:O = 36:56:8. In the photoelectrochemical measurement, a weak negative photo-current was observed for the iron sulfide films, which indicates that its conduction type is p-type. No peaks were observed in X-ray diffraction pattern, and thus the deposited films were considered to be amorphous. For a heterojunction with ZnO, rectification properties were confirmed in the current-voltage characteristics. Moreover, the current was clearly enhanced under AM1.5 illumination.

• OSTI ID: 22269544
• Journal Information: APL Materials, Vol. 2, Issue 3; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AQUEOUS SOLUTIONS
DEPOSITS
ELECTRIC POTENTIAL
ELECTRODEPOSITION
HETEROJUNCTIONS
IRON SULFATES
IRON SULFIDES
SODIUM COMPOUNDS
THIN FILMS
X-RAY DIFFRACTION
ZINC OXIDES