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Title: Diffusion of n-type dopants in germanium

Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation.
Authors:
 [1] ;  [2] ;  [3]
  1. Engineering and Innovation, The Open University, Milton Keynes MK7 6AA (United Kingdom)
  2. (United Kingdom)
  3. Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster (Germany)
Publication Date:
OSTI Identifier:
22269540
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Reviews; Journal Volume: 1; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY; ARSENIC; BORON; DEFECTS; DIFFUSION; DOPED MATERIALS; ENGINEERING; GERMANIUM; INTERACTIONS; SEMICONDUCTOR MATERIALS; SILICON