skip to main content

Title: Effect of geometry on the screened acceptor binding energy in a quantum wire

The effect of various Geometries G(x, y) of the GaAs/Al{sub x}Ga{sub 1−x}As Quantum wire like G{sub 1}: (L, L) {sub 2}: (L, L/2) {sub 3}: (L/2, L/4) on the binding energy of an on-center acceptor impurity has been investigated through effective mass approximation using variational technique. The observations were made including the effect of spatial dependent dielectric screening for different concentration of Al, at T=300K. The influence of spatial dielectric screening on different geometries of the wire has been compared and hence the behavior of the acceptor impurity in GaAs/Al{sub x}Ga{sub 1−x}As Quantum wire has been discussed.
Authors:
;  [1]
  1. Department of Physics, Gandhigram Rural University, Gandhigram - 624 302, Tamilnadu (India)
Publication Date:
OSTI Identifier:
22269460
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; ALUMINIUM COMPOUNDS; APPROXIMATIONS; BINDING ENERGY; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DIELECTRIC MATERIALS; EFFECTIVE MASS; GALLIUM ARSENIDES; INTERFACES; QUANTUM WIRES; VARIATIONAL METHODS; X-RAY SPECTROSCOPY