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Title: Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.
Authors:
; ;  [1] ;  [2]
  1. Department of Physics, Indian Institute of Technology Bombay, Mumbai - 400076 (India)
  2. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai - 400076 (India)
Publication Date:
OSTI Identifier:
22269445
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; BUFFERS; DEPOSITION; GALLIUM; GALLIUM NITRIDES; LAYERS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POLYCRYSTALS; SCANNING ELECTRON MICROSCOPY; SPECTRA; SPUTTERING; X-RAY DIFFRACTION; ZINC OXIDES