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Title: Study of sub band gap absorption of Sn doped CdSe thin films

The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively.
Authors:
;  [1] ;  [2]
  1. Department of Physics, Panjab University, Chandigarh- 160014 (India)
  2. Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160014 (India)
Publication Date:
OSTI Identifier:
22269432
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; CADMIUM SELENIDES; CRYSTALS; DOPED MATERIALS; EVAPORATION; GLASS; NANOSTRUCTURES; OSCILLATOR STRENGTHS; OSCILLATORS; REFRACTIVE INDEX; SPECTRA; SUBSTRATES; THIN FILMS