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Title: Conducting intrinsic nanocrystalline silicon films with high growth rate prepared at 27.12 MHz frequency

Growth and characterization of intrinsic nanocrystalline silicon (nc-Si:H) thin films have been studied using 27.12 MHz H{sub 2}−diluted SiH{sub 4} plasma in PECVD, by optimizing the gas pressure during deposition. High electrical conductivity (∼10{sup −3} S cm{sup −1}) and narrow optical gap (1.762 eV) of the mostly crystalline (∼80%) network with optimum hydrogenation and dominance towards thermodynamically preferred (220) crystallographic orientation, obtained at a high growth rate (39 nm/min), signify its promising use in the fabrication of devices e.g., solar cells in particular.
Authors:
;  [1]
  1. Nano-Science Group, Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata - 700 032 (India)
Publication Date:
OSTI Identifier:
22269430
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHEMICAL VAPOR DEPOSITION; CRYSTALS; ELECTRIC CONDUCTIVITY; FABRICATION; HYDROGENATION; NANOSTRUCTURES; PLASMA; SILANES; SILICON; SOLAR CELLS; THIN FILMS