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Title: Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4873084· OSTI ID:22269395
;  [1];  [2];  [3]
  1. Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India)
  2. Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India)
  3. Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

OSTI ID:
22269395
Journal Information:
AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English

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