skip to main content

SciTech ConnectSciTech Connect

Title: Enhanced room temperature magnetoresistance in p−La{sub 0.7}Ca{sub 0.3}MnO{sub 3}/SrTiO{sub 3}/n−Si heterostructure: A possible spintronics application

An experimental study of p−La{sub 0.7}Ca{sub 0.3}MnO{sub 3}/SrTiO{sub 3}/n−Si heterostructure in which La{sub 0.7}Ca{sub 0.3}MnO{sub 3} (LCMO) and Si are separated by a thin interfacial SrTiO{sub 3} (STO) layer with typical thickness ∼ 15 nm, has been in situ fabricated with the pulsed laser deposition technique. The junction exhibits good rectifying diode like behavior over the temperature range of 10 - 300 K. The heterostructure also exhibits metal-oxide-semiconductor like behavior with all type of possible current flow mechanisms through the heterojunction. The junction magnetoresistance (JMR) (∼ 30% at 300 K) properties of p-LCMO/STO/n-Si heterostructure have been studied over the temperature range of 100-300 K. The JMR is positive and strongly depends on temperature at an applied forward bias voltage of 3 V. The relation between JMR and external magnetic field is found to be Δρ/ρ≈ α H{sup β} type, having both α and β temperature dependent. We attribute the emergence of positive JMR to the quantum mechanical tunneling transport mechanism across the heterojunction.
Authors:
; ; ; ;  [1]
  1. Department of Physics and Meteorology, Indian Institute of Technology Kharagpur- 721302, West Bengal (India)
Publication Date:
OSTI Identifier:
22269382
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC POTENTIAL; ENERGY BEAM DEPOSITION; HETEROJUNCTIONS; LASER RADIATION; MAGNETIC FIELDS; MAGNETORESISTANCE; OXIDES; PULSED IRRADIATION; QUANTUM MECHANICS; SEMICONDUCTOR MATERIALS; STRONTIUM TITANATES; TEMPERATURE DEPENDENCE; TUNNEL EFFECT