Energy loss rate in disordered quantum well

Journal Article · Thu Apr 24 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4872998· OSTI ID:22269336

Tripathi, P.; Ashraf, S. S. Z. ^[1]; Hasan, S. T. ^[2]; Sharma, A. C. ^[3]

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1. Centre of Excellence in Nanomaterials, Faculty of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India)
2. Physics Department, Faculty of Science, The M.S. University of Baroda, Vadodara-390002 (India)
3. Physics Department, Sibli National College, Azamgarh-276128 (India)

We report the effect of dynamically screened deformation potential on the electron energy loss rate in disordered semiconductor quantum well. Interaction of confined electrons with bulk acoustic phonons has been considered in the deformation coupling. The study concludes that the dynamically screened deformation potential coupling plays a significant role as it substantially affects the power dependency of electron relaxation on temperature and mean free path.

• OSTI ID: 22269336
• Journal Information: AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
COUPLING
DEFORMATION
ELECTRONS
ENERGY LOSSES
INTERACTIONS
MEAN FREE PATH
QUANTUM WELLS
SEMICONDUCTOR MATERIALS