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Title: Modeling and simulation of CuIn{sub 1−x}Ga{sub x}Se{sub 2} based thin film solar cell

In this work, CIGS (Copper Indium Gallium Diselenide) based solar cell structure has been simulated. We have been calculated short circuit current, open circuit voltage and efficiency of the cell. The thickness of the absorption layer is varied from 400 to 3000 nm, keeping the thickness of other layers unchanged. The effect of absorption layer thickness over cell performance has been analyzed and found that the efficiency increases upto 22% until the thickness of the absorption layer reaches around 2000 nm.
Authors:
;  [1] ; ;  [2]
  1. Department of Physics, Banasthali University, Rajasthan-304022 (India)
  2. Department of Electronics and Communication, Krishna Institute of Engg. and Tech., Ghaziabad-201206 (India)
Publication Date:
OSTI Identifier:
22269334
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; COPPER; EFFICIENCY; ELECTRIC POTENTIAL; GALLIUM; INDIUM; LAYERS; SIMULATION; SOLAR CELLS; THICKNESS; THIN FILMS