skip to main content

SciTech ConnectSciTech Connect

Title: Effect of Al-mole fraction in Al{sub x}Ga{sub 1−x}N grown by MOCVD

AlGaN/AlN layers were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The Al{sub x}Ga{sub 1−x}N layer composition was varied from 15% to 25%. The crystalline quality, thickness and aluminum (Al) composition of AlGaN were determined using high resolution X-ray diffraction (HRXRD). The growth rate decreases on increasing Al composition. Reciprocal space mapping (RSM) was used to estimate the strain and relaxation between AlGaN and AlN. The optical properties of AlGaN layers were investigated by room temperature Photoluminescence (PL). The AlGaN peak shifts towards lower wavelength with Al composition. The surface morphology of AlGaN was studied by atomic force microscopy (AFM). Root mean square (RMS) roughness values were found to be increased in AlGaN layers with composition.
Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Crystal Growth Centre, Anna University, Chennai - 600025 (India)
Publication Date:
OSTI Identifier:
22269333
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; LAYERS; OPTICAL PROPERTIES; PEAKS; PHOTOLUMINESCENCE; RELAXATION; SAPPHIRE; SUBSTRATES; WAVELENGTHS; X-RAY DIFFRACTION