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Title: Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.
Authors:
;  [1] ;  [2] ;  [3] ;  [4]
  1. Department of Physics, Mangalore Institute of Technology and Engineering, Moodabidri, Mangalore-574225 (India)
  2. Department of Physics, Sri Devi Institute of Technology, Kenjar, Mangalore-574142 (India)
  3. Microtron Centre, Department of Physics, Mangalore University, Mangalagangothri-574199 (India)
  4. Solar Panel Division, ISRO Satellite Centre, Bangalore-560017 (India)
Publication Date:
OSTI Identifier:
22269332
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DENSITY; DOSES; ELECTRIC POTENTIAL; ELECTRONS; IRRADIATION; SOLAR CELLS