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Title: Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.
Authors:
;  [1]
  1. Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)
Publication Date:
OSTI Identifier:
22269331
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ENERGY LEVELS; GALLIUM NITRIDES; POISSON EQUATION; SCHROEDINGER EQUATION; TEMPERATURE DEPENDENCE