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Title: High total dose proton irradiation effects on silicon NPN rf power transistors

The effects of 3 MeV proton irradiation on the I-V characteristics of NPN rf power transistors were studied in the dose range of 100 Krad to 100 Mrad. The different electrical characteristics like Gummel, current gain and output characteristics were systematically studied before and after irradiation. The recovery in the I-V characteristics of irradiated NPN BJTs were studied by isochronal and isothermal annealing methods.
Authors:
; ;  [1] ;  [2]
  1. Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006, Karnataka (India)
  2. Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025, Karnataka (India)
Publication Date:
OSTI Identifier:
22269330
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; DOSES; ELECTRIC CONDUCTIVITY; IRRADIATION; PROTONS; SILICON; TRANSISTORS