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Title: Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.
Authors:
; ;  [1]
  1. Crystal Growth Centre, Anna University, Chennai-600025 (India)
Publication Date:
OSTI Identifier:
22269328
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ACETIC ACID; ALUMINIUM; ETHYLENE; GALLIUM NITRIDES; NANOSTRUCTURES; OPTICAL PROPERTIES; PARTICLES; PHOTOLUMINESCENCE; POWDERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SOL-GEL PROCESS; SYNTHESIS; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY