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Title: Investigations on Landé factor in a strained Ga{sub x}In{sub 1−x}As/GaAs quantum dot

The effective excitonic g-factor as functions of dot radius and the Ga alloy content, in a strained Ga{sub x}In{sub 1−x}As/GaAs quantum dot, is numerically measured. The heavy hole excitonic states are studied for various Ga alloy content taking into account the anisotropy, non-parabolicity of the conduction band and the geometrical confinement effects. The quantum dot is considered as spherical dot of InAs surrounded by a GaAs barrier material.
Authors:
 [1] ;  [2]
  1. Dept. of Physics, SSM Institute of Engineering and Technology, Dindigul-624002, Tamilnadu (India)
  2. Dept. of Physics, Government Arts College, Melur-625106, Tamilnadu (India)
Publication Date:
OSTI Identifier:
22269324
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; ALLOYS; ANISOTROPY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LANDE FACTOR; QUANTUM DOTS; STRAINS; X-RAY SPECTROSCOPY