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Title: Effective Landé factor in a GaMnAs quantum dot; with the effects of sp-d exchange on a bound polaron

The effective g-factor of conduction (valence) band electron (hole) is obtained in the GaMnAs quantum dot. Magneto bound polaron in a GaMnAs/Ga{sub 0.6}Al{sub 0.4}As quantum dot is investigated with the inclusion of exchange interaction effects due to Mn alloy content and the geometrical confinement. The spin polaronic energy of the heavy hole exciton is studied with the spatial confinement using a mean field theory in the presence of magnetic field strength.
Authors:
;  [1]
  1. Dept. of Physics, Government Arts College, Melur-625106, Tamilnadu (India)
Publication Date:
OSTI Identifier:
22269322
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALLOYS; EXCHANGE INTERACTIONS; LANDE FACTOR; MAGNETIC FIELDS; MEAN-FIELD THEORY; QUANTUM DOTS